Device reliability challenges for modern semiconductor circuit design – a review
نویسندگان
چکیده
منابع مشابه
Software reliability: modern challenges
The evolution of computer technology is creating for safety-critical systems new challenges and different types of failure modes. Modern computer processors are often delivered with errors, while intelligent hardware subsystems may exhibit nondeterministic behaviour. Operating systems and programming languages are becoming increasingly complicated and their implementations less trustworthy. In ...
متن کاملReliability Design Technology for Power Semiconductor Modules
The market for power semiconductor modules is spreading not only to general-purpose inverters, servo motor drives, NC machine tools and elevators but also to new applications through the realization of electric vehicles and renewable energy systems. Fuji Electric has developed various power modules in response to market needs, and as the market expands in the future, the required performance fo...
متن کاملA Modern Approach to Semiconductor and Vacuum Device Theory
An integrated approach to the understanding of charge-controlled electronic devices is presented. Although only vacuum triodes and diffusion-type transistors are discussed in detail, the methods suggested are also applicable to gas-filled and multi-electrode vacuum structures, to surface-barrier and to drift-type transistors, and to space-chargelimited solid-state devices. The treatment is tuto...
متن کاملReliability physics study for semiconductor-polymer device development
We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications. q 2003 Elsevier Science Ltd. All rights reserved.
متن کاملReview of Fin FET Technology and Circuit Design Challenges
Considering the difficulties in planar CMOS transistor scaling to secure an acceptable gate to channel control FinFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing the existing technology. The desirability of FinFET that it’s operation principle is same as CMOS process. This permits to lengthening the gate scaling beyond the planar transistor limits, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advances in Radio Science
سال: 2009
ISSN: 1684-9973
DOI: 10.5194/ars-7-201-2009